JPS61208863A - Ｃｍｏｓ半導体装置 - Google Patents

Ｃｍｏｓ半導体装置

Info

Publication number
JPS61208863A
JPS61208863A JP60049359A JP4935985A JPS61208863A JP S61208863 A JPS61208863 A JP S61208863A JP 60049359 A JP60049359 A JP 60049359A JP 4935985 A JP4935985 A JP 4935985A JP S61208863 A JPS61208863 A JP S61208863A
Authority
JP
Japan
Prior art keywords
transistor
substrate
region
base
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60049359A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0314232B2 (en]
Inventor
Yoichiro Niitsu
新津　陽一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60049359A priority Critical patent/JPS61208863A/ja
Publication of JPS61208863A publication Critical patent/JPS61208863A/ja
Publication of JPH0314232B2 publication Critical patent/JPH0314232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP60049359A 1985-03-14 1985-03-14 Ｃｍｏｓ半導体装置 Granted JPS61208863A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60049359A JPS61208863A (ja) 1985-03-14 1985-03-14 Ｃｍｏｓ半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60049359A JPS61208863A (ja) 1985-03-14 1985-03-14 Ｃｍｏｓ半導体装置

Publications (2)

Publication Number Publication Date
JPS61208863A true JPS61208863A (ja) 1986-09-17
JPH0314232B2 JPH0314232B2 (en]) 1991-02-26

Family

ID=12828821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60049359A Granted JPS61208863A (ja) 1985-03-14 1985-03-14 Ｃｍｏｓ半導体装置

Country Status (1)

Country Link
JP (1) JPS61208863A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162539A (ja) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd データ出力バッファ
JPH08330431A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08162539A (ja) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd データ出力バッファ
JPH08330431A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0314232B2 (en]) 1991-02-26

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